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MGFS45V2325A(1999) 数据手册 ( 数据表 ) - MITSUBISHI ELECTRIC

MGFS45V2325A image

零件编号
MGFS45V2325A

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1 Pages

File Size
49.1 kB

生产厂家
Mitsubishi
MITSUBISHI ELECTRIC  Mitsubishi

DESCRIPTION
The MGFS45V2325A is an internally impedance-matched GaAs power FET especially designed for use in 2.3 - 2.5 GHz band amplifiers.The hermetically sealed metal-ceramic package guarantees high reliability.


FEATURES
   Class A operation
   Internally matched to 50(ohm) system
   High output power
      P1dB = 32W (TYP.) @ f=2.3 - 2.5 GHz
   High power gain
      GLP = 12 dB (TYP.) @ f=2.3 - 2.5GHz
   High power added efficiency
      P.A.E. = 45 % (TYP.) @ f=2.3 - 2.5GHz
   Low distortion [item -51]
      IM3=-45dBc(TYP.) @Po=34.5dBm S.C.L.


APPLICATION
   item 01 : 2.3 - 2.5 GHz band power amplifier
   item 51 : 2.3 - 2.5 GHz band digital radio communication

Page Link's: 1 

零件编号
产品描述 (功能)
PDF
生产厂家
6.4-7.2GHz BAND 32W INTERNALLY MATCHED GaAs FET . ( Rev : 1998 )
MITSUBISHI ELECTRIC
4.4 - 5.0GHz BAND 32W INTERNALLY MATCHED GaAs FET
MITSUBISHI ELECTRIC
2.5 - 2.7GHz BAND 32W INTERNALLY MATCHED GaAs FET
Mitsumi
3.6 - 4.2GHz BAND 32W INTERNALLY MATCHED GaAs FET ( Rev : 1999 )
MITSUBISHI ELECTRIC
4.4 - 5.0GHz BAND 32W INTERNALLY MATCHED GaAs FET
Mitsumi
3.4 - 3.6GHz BAND 32W INTERNALLY MATCHED GaAs FET
Mitsumi
2.1 - 2.3GHz BAND 32W INTERNALLY MATCHED GaAs FET
MITSUBISHI ELECTRIC
1.9 - 2.0GHz BAND 32W INTERNALLY MATCHED GaAs FET ( Rev : 1999 )
MITSUBISHI ELECTRIC
6.4-7.2GHz BAND 32W INTERNALLY MATCHED GaAs FET
MITSUBISHI ELECTRIC
5.9 - 6.4GHz BAND 32W INTERNALLY MATCHED GaAs FET ( Rev : 1998 )
MITSUBISHI ELECTRIC

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