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MJD122 数据手册 ( 数据表 ) - Inchange Semiconductor

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零件编号
MJD122

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  V2  

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2 Pages

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236.6 kB

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Iscsemi
Inchange Semiconductor Iscsemi

DESCRIPTION
· Low Collector-Emitter saturation voltage
· Lead formed for surface mount applications
· High DC current gain
· 100% avalanche tested
· Minimum Lot-to-Lot variations for robust device performance and reliable operation


APPLICATIONS
· Designed for general purpose amplifier and low speed switching applications.


零件编号
产品描述 (功能)
PDF
生产厂家
Silicon NPN Darlington Power Transistor ( Rev : V2 )
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Unspecified
Silicon NPN Darlington Power Transistor
Shenzhen SPTECH Microelectronics Co., Ltd.

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