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MJD200T4 数据手册 ( 数据表 ) - ON Semiconductor

MJD200 image

零件编号
MJD200T4

Other PDF
  2001   2005  

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6 Pages

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Complementary Plastic Power Transistors
NPN/PNP Silicon DPAK For Surface Mount Applications
   
Designed for low voltage, low−power, high−gain audio amplifier applications.


FEATUREs
• Collector−Emitter Sustaining Voltage − VCEO(sus)= 25 Vdc (Min) @ IC= 10 mAdc
• High DC Current Gain − hFE = 70 (Min) @ IC= 500 mAdc
                                                =  45 (Min) @ IC= 2 Adc
                                                = 10 (Min) @ IC= 5 Adc
• Lead Formed for Surface Mount Applications in Plastic Sleeves
    (No Suffix)
• Low Collector−Emitter Saturation Voltage −VCE(sat)= 0.3 Vdc (Max) @ IC= 500 mAdc
                                                                                      = 0.75 Vdc (Max) @ IC= 2.0 Adc
• High Current−Gain − Bandwidth Product −fT= 65 MHz (Min) @ IC= 100 mAdc
• Annular Construction for Low Leakage −ICBO= 100 nAdc @ Rated VCB
• Epoxy Meets UL 94 V−0 @ 0.125 in
• ESD Ratings: Human Body Model, 3B 8000 V Machine Model, C 400 V
• Pb−Free Packages are Available

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Complementary Plastic Power Transistors
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Complementary Silicon Plastic Power Transistors ( Rev : 2014 )
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Complementary Silicon Plastic Power Transistors ( Rev : 2013 )
ON Semiconductor

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