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MJD200T4G(2005) 数据手册 ( 数据表 ) - ON Semiconductor

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MJD200T4G

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Complementary Plastic Power Transistors
NPN/PNP Silicon DPAK For Surface Mount Applications
   
Designed for low voltage, low−power, high−gain audio amplifier applications.
   
Features
• Collector−Emitter Sustaining Voltage −
VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc
• High DC Current Gain − hFE = 70 (Min) @ IC = 500 mAdc
                                                 = 45 (Min) @ IC = 2 Adc
                                                 = 10 (Min) @ IC = 5 Adc
• Lead Formed for Surface Mount Applications in Plastic Sleeves
    (No Suffix)
• Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)
• Low Collector−Emitter Saturation Voltage −
    VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc
                    = 0.75 Vdc (Max) @ IC = 2.0 Adc
• High Current−Gain − Bandwidth Product −
    fT= 65 MHz (Min) @ IC = 100 mAdc
• Annular Construction for Low Leakage −
    ICBO = 100 nAdc @ Rated VCB
• Epoxy Meets UL 94, V−0 @ 0.125 in.
• ESD Ratings: Human Body Model, 3B > 8000 V
                         Machine Model, C > 400 V
• Pb−Free Packages are Available
   

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