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MJD253T4(2004) 数据手册 ( 数据表 ) - ON Semiconductor

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零件编号
MJD253T4

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ON Semiconductor ON-Semiconductor

Complementary Silicon Plastic Power Transistor
DPAK−3 for Surface Mount Applications

Designed for low voltage, low−power, high−gain audio amplifier applications.


FEATUREs
• Collector−Emitter Sustaining Voltage −
   VCEO(sus) = 100 Vdc (Min) @ IC
                      = 10 mAdc
• High DC Current Gain −
   hFE = 40 (Min) @ IC
           = 200 mAdc
           = 15 (Min) @ IC = 1.0 Adc
• Lead Formed for Surface Mount Applications in Plastic Sleeves
   (No Suffix)
• Straight Lead Version in Plastic Sleeves (“−1” Suffix)
• Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)
• Low Collector−Emitter Saturation Voltage −
   VCE(sat) = 0.3 Vdc (Max) @ IC
                   = 500 mAdc
                   = 0.6 Vdc (Max) @ IC = 1.0 Adc
• High Current−Gain − Bandwidth Product −
   fT = 40 MHz (Min) @ IC
       = 100 mAdc
• Annular Construction for Low Leakage −
   ICBO = 100 nAdc @ Rated VCB
• Epoxy Meets UL 94, V−0 @ 0.125 in.
• ESD Ratings: Human Body Model, 3B > 8000 V
                         Machine Model, C > 400 V
• Pb−Free Package is Available


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生产厂家
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