POWER TRANSISTORS 10 AMPERES 800 VOLTS 125 AND 175 WATTS

These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated switchmode applications.

Features:
• Collector–Emitter Voltage — VCEV= 1500 Vdc
• Fast Turn–Off Times
    80 ns Inductive Fall Time — 100°C (Typ)
    110 ns Inductive Crossover Time — 100°C (Typ)
    4.5 µs Inductive Storage Time — 100°C (Typ)
• 100°C Performance Specified for:
   Reverse–Biased SOA with Inductive Load
   Switching Times with Inductive Loads
   Saturation Voltages
   Leakage Currents