MMBR901L 数据手册 ( 数据表 ) - New Jersey Semiconductor
零件编号
MMBR901L
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2 Pages
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79.9 kB
生产厂家
New Jersey Semiconductor
DESCRIPTION
• Low Noise
• High Power Gain
Gpe = 12.0 dB TYP. @ f = 1 GHz
APPLICATIONS
• Designed for use in high gain ,low noise , small signal
amplifiers for operation up to 2.5GHz.
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