MPS-U56 数据手册 ( 数据表 ) - New Jersey Semiconductor
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MPS-U56
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New Jersey Semiconductor
PNP SILICON ANNULAR AMPLIFIER TRANSISTORS
. . . designed for general-purpose, high-voltage ampl fier and driver applications.
• High Collector-Emitter Breakdown Voltage -
BVCEO = 60Vdc<Min) @ lc = 1 .0 mAdc - MPS-U55
80 Vdc (Mini @ Ic = 1,0 mAdc - MPS-U56
• High Power Dissipation - Prj = 1 0 W @ TC = 25°C
• Complements to NPN MPS-U05 and MPS-U06
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