MRF421 数据手册 ( 数据表 ) - New Jersey Semiconductor
零件编号
MRF421
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New Jersey Semiconductor
Designed primarily for application as a high-power linear amplifier from 2.0 to 30 MHz.
● Specified 12.5 V, 30 MHz characteristics —
Output power = 100 W (PEP)
Minimum gain = 10 dB
Efficiency = 40%
● Intermodulation distortion @ 100 W (PEP) — IMD = -30 dB (min.)
● 100% tested for load mismatch at all phase angles with 30:1 VSWR
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