DESCRIPTION:
The MS3023 is a common base, hermetically sealed silicon NPN microwave power transistor. This device is designed for Class C applications in the 1 - 2 GHz frequency range. Gold metalization and emitter ballasting provide long-term reliability and superior ruggedness.

FEATUREs
• GOLD METALIZATION
• Pout = 3.0 W MINIMUM
• 2.0 GHz
• Gp = 7.8 dB
• INFINITE VSWR CAPABLE @ RATED CONDITIONS
• HERMETIC PACKAGE
• COMMON BASE CONFIGURATION