General Description
   NAND Flash technology provides a cost-effective solution for applications requiring high-density, solid-state storage. The MT29F4G08AAA is a 4Gb NAND Flash memory device. The MT29F8G08BAA is a two-die stack that operates as a single 8Gb device. The MT29F8G08DAA is a two-die stack that operates as two independent 4Gb devices. The MT29F16G08FAA is a four-die stack that operates as two independent 8Gb devices, providing a total storage capacity of 16Gb in a single, space-saving package. Micron NAND Flash devices include standard NAND Flash features as well as new features designed to enhance system-level performance.

FEATUREs
• Single-level cell (SLC) technology
• Organization
   – Page size x8: 2,112 bytes (2,048 + 64 bytes)
   – Block size: 64 pages (128K + 4K bytes)
   – Plane size: 2,048 blocks
   – Device size: 4Gb: 4,096 blocks; 8Gb: 8,192 blocks;
      16Gb: 16,384 blocks
• READ performance
   – Random READ: 25µs (MAX)
   – Sequential READ: 25ns (MIN)
• WRITE performance
   – PROGRAM PAGE: 220µs (TYP)
   – BLOCK ERASE: 1.5ms (TYP)
• Data retention: 10 years
• Endurance: 100,000 PROGRAM/ERASE cycles
• First block (block address 00h) guaranteed to be
   valid up to 1,000 PROGRAM/ERASE cycles1
• Industry-standard basic NAND Flash command set
• Advanced command set:
   – PROGRAM PAGE CACHE MODE
   – PAGE READ CACHE MODE
   – One-time programmable (OTP) commands
   – Two-plane commands
   – Interleaved die operations
   – READ UNIQUE ID (contact factory)
   – READ ID2 (contact factory)
• Operation status byte provides a software method of
   detecting:
   – Operation completion
   – Pass/fail condition
   – Write-protect status
• Ready/busy# (R/B#) signal provides a hardware
   method of detecting operation completion
• WP# signal: write protect entire device
• RESET required after power-up
• INTERNAL DATA MOVE operations supported
   within the plane from which data is read