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MT3S06S 数据手册 ( 数据表 ) - Toshiba

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MT3S06S

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VHF~UHF Band Low Noise Amplifier Applications

• Low noise figure: NF = 1.6dB (VCE = 3 V, IC = 3 mA, f = 2 GHz)
• High gain: |S21e|2 = 9.5dB (VCE = 3 V, IC = 7 mA, f = 2 GHz)


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TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
Toshiba

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