GENERAL DESCRIPTION
The 512Mb DDR SDRAM is a high-speed CMOS, dynamic random-access memory containing 536,870,912 bits. It is internally configured as a quadbank DRAM.
The 512Mb DDR SDRAM uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 2nprefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write access for the 512Mb DDR SDRAM effectively consists of a single 2n-bit wide, one-clockcycle data transfer at the internal DRAM core and two corresponding n-bit wide, one-half-clock-cycle data transfers at the I/O pins.

FEATURES
• VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V
• Bidirectional data strobe (DQS) transmitted/
   received with data, i.e., source-synchronous data
   capture (x16 has two – one per byte)
• Internal, pipelined double-data-rate (DDR)
   architecture; two data accesses per clock cycle
• Differential clock inputs (CK and CK#)
• Commands entered on each positive CK edge
• DQS edge-aligned with data for READs; centeraligned with data for WRITEs
• DLL to align DQ and DQS transitions with CK
• Four internal banks for concurrent operation
• Data mask (DM) for masking write data (x16 has
   two – one per byte)
• Programmable burst lengths: 2, 4, or 8
• x16 has programmable IOL/IOV.
• Concurrent auto precharge option is supported
• Auto Refresh and Self Refresh Modes
• Longer lead TSOP for improved reliability (OCPL)
• 2.5V I/O (SSTL_2 compatible)