MV31009 数据手册 ( 数据表 ) - Microsemi Corporation
零件编号
MV31009
产品描述 (功能)
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PDF
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4 Pages
File Size
185.9 kB
生产厂家
Microsemi Corporation
Description
Microsemi’s GaAs hyperabrupt junction varactor diodes are fabricated from epitaxial layers grown at Microsemi by the Chemical Vapor Deposition technique. The layers are processed at using proprietary techniques resulting in varactors with constant gamma, high Q factor and repeatable tuning curves. These varactors are available in a variety of microwave ceramic packages or bondable chips for operation from UHF to millimeter wave frequencies.
Features
● High Q Values for Higher Frequency Performance
● Large Tuning Ratios
● Low Reverse Current
● Gamma Values to 1.5
● Available as Bondable Chips and as
Packaged Diodes
● Available in Chip-on-Board Packaging
● Custom Designs Available
Applications
● VCOs
● Phase-Locked Oscillators
● High Q Tunable Filters
● Phase Shifters
● Pre-Selectors
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