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MWCT101XS 数据手册 ( 数据表 ) - NXP Semiconductors.

MWCT101XS image

零件编号
MWCT101XS

产品描述 (功能)

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page
65 Pages

File Size
1.1 MB

生产厂家
NXP
NXP Semiconductors. NXP

Key Features
• Operating characteristics
   – Voltage range: 2.7 V to 5.5 V
   – Ambient temperature range: -40 °C to 105 °C for
      HSRUN mode, -40 °C to 125 °C for RUN mode
• Arm™ Cortex-M4F core, 32-bit CPU
   – Supports up to 112 MHz frequency (HSRUN) with
      1.25 Dhrystone MIPS per MHz
   – Arm Core based on the Armv7 Architecture and
      Thumb®-2 ISA
   – Integrated Digital Signal Processor (DSP)
   – Configurable Nested Vectored Interrupt Controller
      (NVIC)
   – Single Precision Floating Point Unit (FPU)
• Clock interfaces
   – 4 - 40 MHz fast external oscillator (SOSC)
   – 48 MHz Fast Internal RC oscillator (FIRC)
   – 8 MHz Slow Internal RC oscillator (SIRC)
   – 128 kHz Low Power Oscillator (LPO)
   – Up to 112 MHz (HSRUN) System Phased Lock
      Loop (SPLL)
   – Up to 50 MHz DC external square wave input clock
   – Real Time Counter (RTC)
• Power management
   – Low-power Arm Cortex-M4F core with excellent
      energy efficiency
   – Power Management Controller (PMC) with multiple
      power modes: HSRUN, RUN, STOP, VLPR, and
      VLPS. Note: CSEc (Security) or EEPROM writes/
      erase will trigger error flags in HSRUN mode (112
      MHz) because this use case is not allowed to
      execute simultaneously. The device will need to
      switch to RUN mode (80 Mhz) to execute CSEc
      (Security) or EEPROM writes/erase.
   – Clock gating and low power operation supported on
      specific peripherals.
• Memory and memory interfaces
   – Up to 2 MB program flash memory with ECC
   – 64 KB FlexNVM for data flash memory with ECC
      and EEPROM emulation. Note: CSEc (Security) or
      EEPROM writes/erase will trigger error flags in
      HSRUN mode (112 MHz) because this use case is
      not allowed to execute simultaneously. The device
      will need to switch to RUN mode (80 MHz) to
      execute CSEc (Security) or EEPROM writes/erase.
   – Up to 256 KB SRAM with ECC
   – Up to 4 KB of FlexRAM for use as SRAM or
      EEPROM emulation
   – Up to 4 KB Code cache to minimize performance
      impact of memory access latencies
   – QuadSPI with HyperBus™ support

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