FEATURES
GENERAL FEATURES
• Power Supply Operation
    - 2.7 to 3.6 volt for read, erase, and program operations
    - V I/O voltage must tight with VCC
       - V I/O=VCC=2.7V~3.6V
• Byte/Word mode switchable
    - 33,554,432 x 8 / 16,777,216 x 16 (MX29GA256/257E H/L)
    - 16,777,216 x 8 / 8,388,608 x 16 (MX29GA128/129E H/L)
• 64KW/128KB uniform sector architecture
    - MX29GA256/257E H/L: 256 equal sectors
    - MX29GA128/129E H/L: 128 equal sectors
• 16-byte/8-word page read buffer
• 64-byte/32-word write buffer
• Latch-up protected to 100mA from -1V to 1.5xVcc
• Low Vcc write inhibit : Vcc ≤ VLKO
• Compatible with JEDEC standard
    - Pinout and software compatible to single power supply Flash
• Deep power down mode

PERFORMANCE
• High Performance
    - MX29GA256/257E H/L: 90ns (Vcc=3.0~3.6V), 100ns (Vcc=2.7~3.6V)
    - MX29GA128/129E H/L: 90ns (Vcc=2.7~3.6V)
    - Page access time: 25ns
    - Fast program time: 11us/word
    - Fast erase time: 0.6s/sector
• Low Power Consumption
    - Low active read current: 30mA (typical) at 5MHz
    - Low standby current: 30uA (typical)
• Typical 100,000 erase/program cycle
• 10 years data retention

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