General Description
These dual N and P-channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. These devices is particularly suited for low voltage, low current, switching, and power supply applications.

FEATUREs
■ N-Channel 0.51A, 50V, RDS(ON) = 2Ω @ VGS=10V
■ P-Channel -0.34A, -50V. RDS(ON)= 5Ω @ VGS=-10V.
■ High density cell design for low RDS(ON).
■ Proprietary SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities.
■ High saturation current.