DESCRIPTION
The NE68139 / 2SC4094 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. Low-noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This achieved by direct nitride passivated base surface process (DNP process) which is a proprietary new fabrication technique.

FEATURES
• NF = 1.2 dB TYP. @f = 1.0 GHz, VCE = 8 V, IC = 7 mA
• |S21e|2 = 15 dB TYP. @f = 1.0 GHz, VCE = 8 V, IC = 20 mA