DESCRIPTION
NE76100 is a high performance gallium arsenide metal semiconductor field effect transistor chip. Its low noise figure makes this device appropriate for use in the second or third stages of low noise amplifiers operating in the 1-12 GHz frequency range. The device is fabricated using ion implantation for improved RF and DC performance, reliability, and uniformity. The NE76100 is suitable for a wide variety of commercial and industrial applications

FEATURES
• LOW NOISE FIGURE: NF = 0.8 dB typical at f = 4 GHz
• HIGH ASSOCIATED GAIN: GA = 12.0 dB typical at f = 4 GHz
• LG = 1.0 µm, WG = 400 µm