DESCRIPTION
The NE8500199 Power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on.
NE8500100 is the two-cells recessed gate chip used in ‘99’ package.
The device incorporates Ti-Al gate and silicon dioxide glassivation. To reduce the thermal resistance, the device has a PHS. (Plated Heat Sink)
NEC’s strigent quality assurance and test procedures assure the highest reliability and performance.

FEATURES
• Class A operation
• High power output
• High reliability