NESG2031M05-A 数据手册 ( 数据表 ) - Renesas Electronics
零件编号
NESG2031M05-A
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生产厂家
Renesas Electronics
FEATURES
• The device is an ideal choice for low noise, high-gain at low current amplifications.
⎯ NF = 0.8 dB TYP., Ga = 17.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz
⎯ NF = 1.3 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 5.2 GHz
• Maximum stable power gain: MSG = 21.5 dB TYP. @ VCE = 3 V, IC = 20 mA, f = 2 GHz
• High breakdown voltage technology for SiGe Tr. adopted: VCEO (absolute maximum ratings) = 5.0 V
• Flat-lead 4-pin thin-type super minimold (M05) package
零件编号
产品描述 (功能)
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生产厂家
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