Power MOSFET with Current Mirror FET
24 V, 9.5 A, N−Channel, ESD Protected,
1:250 Current Mirror, SO−8 Leadless
N−Channel MOSFET with 1:250 current mirror device utilizing the latest ON Semiconductor technology to achieve low figure of merit while keeping a high accuracy in the linear region. This device takes advantage of the latest leadless QFN package to improve thermal transfer.
FEATUREs
• Current Sense MOSFET
• 15% Current Mirror Accuracy
• ESD Protected on the Main and the Mirror MOSFET
• Low Gate Charge
• Pb−Free Package is Available*
APPLICATIONs
• DC−DC Converters
• Voltage Regulator Modules
• Small DC Motor Controls