NP100P06PLG 数据手册 ( 数据表 ) - NEC => Renesas Technology
零件编号
NP100P06PLG
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7 Pages
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NEC => Renesas Technology
DESCRIPTION
The NP100P06PLG is P-channel MOS Field Effect Transistor designed for high current switching applications.
FEATURES
• Super low on-state resistance
RDS(on)1 = 6.0 mΩ MAX. (VGS = −10 V, ID = −50 A)
RDS(on)2 = 7.8 mΩ MAX. (VGS = −4.5 V, ID = −50 A)
• High current rating: ID(DC) = m100 A
• Built-in gate protection diode
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