Description
The NP75P03YDG is P-channel MOS Field Effect Transistor designed for high current switching applications.

FEATUREs
• Low on-state resistance
   ⎯ RDS(on) = 6.2 mΩ MAX. (VGS = −10 V, ID = −37.5 A)
• Low Ciss: Ciss = 3200 pF TYP. (VDS = −25 V, VGS = 0 V)
• Logic level drive type
• Designed for automotive application and AEC-Q101 qualified
• Small size package 8-pin HSON