Description:
The NTE130 (NPN) and NTE219 (PNP) are silicon complementary transistors in a TO3 type case designed for general purpose switching and amplifier applications.
FEATUREs:
• DC Current Gain: hFE = 20 – 70 @ IC = 4A
• Collector–Emitter Saturation Voltage: VCE(sat) = 1.1V (Max) @ IC = 4A
• Excellent Safe Operating Area