Description:
The NTE38 (PNP) and NTE175 (NPN) complementary silicon transistors are designed for high–speed switching and linear amplifier applications for high–voltage operational amplifiers, switching regulators, converters, inverters, deflection stages, and high fidelity amplifiers.

FEATUREs:
• Collector–Emitter Sustaining Voltage:
   NTE38: VCEO(sus) = 350V @ IC = 200mA
   NTE175: VCEO(sus) = 300V @ IC = 200mA
• Second Breakdown Collector Current:
   NTE38 IS/b = 875mA @ VCE = 40V
   NTE175 IS/b = 350mA @ VCE = 100V
• Usable DC Current Gain to 2.0Adc