Description:
The NTE191 (NPN) and NTE240 (PNP) are silicon complementary transistors in a TO202N type package designed for high–voltage video and luminance output stages in TV receivers.

FEATUREs:
• High Collector–Emitter Breakdown Voltage: V(BR)CEO = 300V (Min) @ IC = 1mA
• Low Collector–Emitter Saturation Voltage: VCE(sat) = 0.75V (Max) @ IC = 30mA
• Low Collector–Base Capacitance: Ccb = 3pF (Max) @ VCB = 20V