Description:
The NTE2077is a six−circuit Darlington transistor array with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high−current driving with extremely low input−current supply.

FEATUREs:
• High breakdown voltage (BVCEO ≥ 40V)
• High−current driving (IC(max) = 150mA)
• With clamping diodes
• Driving available with PMOS IC output of 8V to 18V
• Wide input voltage range (VI = −40V to +40V)
• Wide operating temperature range (TA = −20° to +75°C)