Description:
The NTE6232 uses 2 power diodes in series and the semiconductors are electrically isolated from the metal base, allowing common heatsinks and compact assemblies to be built. This device is intended for general purpose applications such as battery chargers, welders and plating equipment and where high voltage and high current are required.

FEATUREs:
Standard Voltage
Electrically Isolated Base Plate
3500VRMS Isolating Voltage
High Surge Capability
Large Creepage Distances

Ratings and Characteristics:
Average Forward Current (TC = +92°C, 180° Conduction, Half Sine Wave), IF(AV) . . . . . . . . . . 100A
Maximum RMS On–State Current, IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 141A
Maximum Repetitive Peak Reverse and Off–State Blocking Voltage, VRRM, VDRM . . . . . . . . 1600V
Maximum Non–Repetitive Peak Reverse Voltage, VRSM . . . . . . . . . . . . .  . . . . . . . . 1700V
Maximum Peak Reverse Current (TJ = +125°C), IRRM . . . . . . . . . . . . . . . . .  . . . . . . . 10mA
RMS Isolation Voltage (50Hz, Circuit to Base, All Terminals Shorted, t = 1s), VISO . . . . . . . . 3500V
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Thermal Resistance, Junction–to–Case (Per Module, DC Operation), RthJC . . . . . . . . . . . 0.22°C/W
Thermal Resistance, Case–to–Sink (Note 1), RthCS . . . . . . . . . . . . . . . . . . . . . 0.1°C/W
Note 1. Mounting surface flat, smooth and greased.