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NX6314EH 数据手册 ( 数据表 ) - Renesas Electronics

NX6314EH image

零件编号
NX6314EH

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7 Pages

File Size
193.9 kB

生产厂家
Renesas
Renesas Electronics Renesas

DESCRIPTION
The NX6314EH is a 1 310 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.


FEATURES
• Optical output power PO = 5.0 mW
• Low threshold current Ith = 10 mA
• Differential efficiency ηd = 0.4 W/A
• Wide operating temperature range TC = −40 to +85°C
• InGaAs monitor PIN-PD
• CAN package φ 5.6 mm
• Focal point 6.7 mm


APPLICATIONS
• 1.25 Gb/s FTTH P2P
• 3 Gb/s BTS


零件编号
产品描述 (功能)
PDF
生产厂家
LASER DIODE 1 310 nm InGaAsP MQW-DFB LASER DIODE
California Eastern Laboratories.
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE
Renesas Electronics
LASER DIODE 1 550 nm InGaAsP MQW-DFB LASER DIODE
Renesas Electronics
LASER DIODE 1 550 nm InGaAsP MQW-DFB LASER DIODE
Renesas Electronics
LASER DIODE 1 550 nm InGaAsP MQW-DFB LASER DIODE
Renesas Electronics
LASER DIODE 1 550 nm InGaAsP MQW-DFB LASER DIODE
California Eastern Laboratories.
LASER DIODE 1 550 nm InGaAsP MQW-DFB LASER DIODE
California Eastern Laboratories.
LASER DIODE 1 270 nm AlGaInAs MQW-DFB LASER DIODE
Renesas Electronics
LASER DIODE 1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE
California Eastern Laboratories.
LASER DIODE 1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE
Renesas Electronics

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