NEC's 1550 nm InGaAsP MQW FP PULSED LASER DIODE IN COAXIAL PACKAGE FOR OTDR APPLICATION (60 mW MIN)
California Eastern Laboratories.
NEC's 1550 nm InGaAsP MQW FP PULSED LASER DIODE IN COAXIAL PACKAGE FOR OTDR APPLICATION (120 mW MIN)
California Eastern Laboratories.
NEC's 1550 nm InGaAsP MQW FP PULSED LASER DIODE IN COAXIAL PACKAGE FOR OTDR APPLICATION (20 mW MIN)
California Eastern Laboratories.
NEC's 1550 nm InGaAsP MQW FP PULSED LASER DIODE IN DIP PACKAGE FOR OTDR APPLICATION (135 mW MIN)
California Eastern Laboratories.
NEC's 1310 nm InGaAsP MQW FP PULSED LASER DIODE IN COAXIAL PACKAGE FOR OTDR APPLICATION (70 mW MIN)
California Eastern Laboratories.
NEC's 1310 nm InGaAsP MQW FP PULSED LASER DIODE IN COAXIAL PACKAGE FOR OTDR APPLICATION (110 mW MIN)
California Eastern Laboratories.
NEC's 1310 nm InGaAsP MQW FP PULSED LASER DIODE IN COAXIAL PACKAGE FOR OTDR APPLICATION (25 mW MIN)
California Eastern Laboratories.
NEC's 1310 nm InGaAsP MQW FP PULSED LASER DIODE IN DIP PACKAGE FOR OTDR APPLICATION (150 mW MIN)
California Eastern Laboratories.
NEC's 1625 nm InGaAsP MQW FP PULSED LASER DIODE IN DIP PACKAGE FOR OTDR APPLICATION (120 mW MIN)
California Eastern Laboratories.
NEC's 1550 nm InGaAsP MQW-FP LASER DIODE IN CAN PACKAGE FOR FTTH APPLICATION
California Eastern Laboratories.