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PA1911A 数据手册 ( 数据表 ) - Renesas Electronics

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零件编号
PA1911A

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10 Pages

File Size
446.4 kB

生产厂家
Renesas
Renesas Electronics Renesas

DESCRIPTION
The µPA1911A is a switching device which can be driven directly by a 2.5 V power source.
The µPA1911A features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.


FEATURES
• Can be driven by a 2.5 V power source
• Low on-state resistance
   RDS(on)1 = 115 mΩ MAX. (VGS = –4.5 V, ID = –1.5 A)
   RDS(on)2 = 120 mΩ MAX. (VGS = –4.0 V, ID = –1.5 A)
   RDS(on)3 = 190 mΩ MAX. (VGS = –2.5 V, ID = –1.0 A)


零件编号
产品描述 (功能)
PDF
生产厂家
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology

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