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PA2782GR 数据手册 ( 数据表 ) - Renesas Electronics

PA2782GR image

零件编号
PA2782GR

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8 Pages

File Size
177.1 kB

生产厂家
Renesas
Renesas Electronics Renesas

DESCRIPTION
The µPA2782GR is N-Channel Power MOSFET, which built a Schottky Barrier Diode inside.
This product is designed for synchronous DC/DC converter application.


FEATURES
• Built a Schottky Barrier Diode
• Low on-state resistance
   RDS(on)1 = 11 mΩ TYP. (VGS = 10 V, ID = 5.5 A)
   RDS(on)2 = 16 mΩ TYP. (VGS = 4.5 V, ID = 5.5 A)
   RDS(on)3 = 19 mΩ TYP. (VGS = 4.0 V, ID = 5.5 A)
• Low Ciss: Ciss = 660 pF TYP.
• Small and surface mount package (Power SOP8)


零件编号
产品描述 (功能)
PDF
生产厂家
SWITCHING N-CHANNEL POWER MOS FET/SCHOTTKY BARRIER DIODE
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET/SCHOTTKY BARRIER DIODE
Renesas Electronics
SWITCHING N-CHANNEL POWER MOS FET/SCHOTTKY BARRIER DIODE
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET/SCHOTTKY BARRIER DIODE
NEC => Renesas Technology
Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching
Renesas Electronics
Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching
Renesas Electronics
Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching ( Rev : 2010 )
Renesas Electronics
Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching ( Rev : 2010 )
Renesas Electronics
Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching ( Rev : 2010 )
Renesas Electronics
Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching
Renesas Electronics

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