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NXP Semiconductors.
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General description
NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS301PD.
FEATUREs
■ Very low collector-emitter saturation resistance
■ Ultra low collector-emitter saturation voltage
■ 4 A continuous collector current
■ Up to 15 A peak current
■ High efficiency due to less heat generation
APPLICATIONs
■ Power management functions
■ Charging circuits
■ DC-to-DC conversion
■ MOSFET gate driving
■ Power switches (e.g. motors, fans)
■ Thin Film Transistor (TFT) backlight inverter
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20 V, 4 A NPN low VCEsat (BISS) transistor
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