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PBSS4240Z 数据手册 ( 数据表 ) - NXP Semiconductors.

PBSS4240Z image

零件编号
PBSS4240Z

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page
14 Pages

File Size
207.4 kB

生产厂家
NXP
NXP Semiconductors. NXP

General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS5240Z


FEATUREs and benefits
• Low collector-emitter saturation voltage VCEsat
• High collector current capability IC and ICM
• High energy efficiency due to less heat generation
• AEC-Q101 qualified


APPLICATIONs
• DC-to-DC conversion
• Supply line switching
• Battery charger
• LCD backlighting
• Driver in low supply voltage applications (e.g. lamps and LEDs)
• Inductive load driver (e.g. relays, buzzers and motors)


零件编号
产品描述 (功能)
PDF
生产厂家
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Nexperia B.V. All rights reserved
40 V, 2 A PNP low VCEsat (BISS) transistor
NXP Semiconductors.
40 V, 2 A PNP low VCEsat (BISS) transistor
Nexperia B.V. All rights reserved
40 V, 2 A PNP low VCEsat (BISS) transistor
NXP Semiconductors.

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