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PBSS5350D_ 数据手册 ( 数据表 ) - Philips Electronics

PBSS8110Z_ image

零件编号
PBSS5350D_

产品描述 (功能)

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Philips
Philips Electronics Philips

Low VCEsat (BISS) transistors

These Breakthrough In Small-Signal (BISS) transistors offer best-in-class efficiency, therefore getting the heat out of your applications. These cost-effective alternatives to medium-power transistors deliver 1 – 5 A capability in SOT223 (SC-73), SOT89 (SC-62), SOT23 or SOT457 (SC-74).


KEY FEATUREs
- Reduced thermal and electrical resistance
- Up to 5 A collector current capability IC
- Up to 10 A peak collector current ICM
- High performance to boardspace ratio
- High current gain hFE - even at high IC
- Extensive range of products available

Key benefits
- Less heat generation and therefore use at
   high ambient temperatures possible
- Cost effective replacement of medium
   power transistors
- Increased performance from small-signal
   discrete footprints

Key applications
- Applications where heat is a concern
   (e.g. engine- or dashboard mounted
   components)
- High and low side switches, e.g. in control
   units
- Drivers in low supply voltage applications,
   e.g. fans, motors
- Inductive load drivers, e.g. relays, buzzers
- MOSFET drivers


零件编号
产品描述 (功能)
PDF
生产厂家
40 V PNP low VCEsat (BISS) transistor
NXP Semiconductors.
40 V NPN low VCEsat (BISS) transistor
Nexperia B.V. All rights reserved
40 V PNP low VCEsat (BISS) transistor
Philips Electronics
40 V NPN low VCEsat (BISS) transistor
NXP Semiconductors.
40 V PNP low VCEsat (BISS) transistor
Nexperia B.V. All rights reserved
20 V NPN/PNP low VCEsat (BISS) transistor
NXP Semiconductors.
40 V, 1A NPN low VCEsat (BISS) transistor
NXP Semiconductors.
40 V, 1A NPN low VCEsat (BISS) transistor
Nexperia B.V. All rights reserved
30 V NPN/PNP low VCEsat (BISS) transistor
NXP Semiconductors.
60 V NPN/PNP low VCEsat (BISS) transistor
NXP Semiconductors.

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