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PBSS5350T 数据手册 ( 数据表 ) - NXP Semiconductors.

PBSS5350T image

零件编号
PBSS5350T

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page
10 Pages

File Size
88.8 kB

生产厂家
NXP
NXP Semiconductors. NXP

DESCRIPTION
PNP low VCEsat transistor in a SOT23 plastic package.
NPN complement: PBSS4350T.


FEATURES
• Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat
• High collector current capability
• High collector current gain
• Improved efficiency due to reduced heat generation.


APPLICATIONS
• Power management applications
• Low and medium power DC/DC convertors
• Supply line switching
• Battery chargers
• Linear voltage regulation with low voltage drop-out (LDO).


零件编号
产品描述 (功能)
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生产厂家
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50 V, 3 A PNP low VCEsat (BISS) transistor
NXP Semiconductors.
50 V, 3 A PNP low VCEsat (BISS) transistor
Philips Electronics
50 V, 3 A PNP low VCEsat (BISS) transistor
NXP Semiconductors.
50 V, 3 A PNP low VCEsat (BISS) transistor
Nexperia B.V. All rights reserved
50 V, 3 A PNP low VCEsat (BISS) transistor
Nexperia B.V. All rights reserved
50 V, 3 A PNP low VCEsat (BISS) transistor
Nexperia B.V. All rights reserved
50 V, 3 A PNP low VCEsat (BISS) transistor
Nexperia B.V. All rights reserved

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