GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications.
The PHW35NQ20T is supplied in the SOT429 (TO247) conventional leaded package.

FEATURES
• ’Trench’ technology
• Very low on-state resistance
• Fast switching
• Low thermal resistance