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PSMN130-200D 数据手册 ( 数据表 ) - Nexperia B.V. All rights reserved

PSMN130-200D image

零件编号
PSMN130-200D

Other PDF
  no available.

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page
12 Pages

File Size
839 kB

生产厂家
NEXPERIA
Nexperia B.V. All rights reserved NEXPERIA

General description
SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.


FEATUREs and benefits
■ Higher operating power due to low
   thermal resistance
■ Low conduction losses due to low
   on-state resistance
■ Suitable for high frequency
   applications due to fast switching
   characteristics


APPLICATIONs
■ DC-to-DC converters 
■ Switched-mode power supplies


零件编号
产品描述 (功能)
PDF
生产厂家
N-channel TrenchMOS SiliconMAX standard level FET
NXP Semiconductors.
N-channel TrenchMOS SiliconMAX standard level FET
Nexperia B.V. All rights reserved
N-channel TrenchMOS SiliconMAX standard level FET
Nexperia B.V. All rights reserved
N-channel TrenchMOS SiliconMAX standard level FET
NXP Semiconductors.
N-channel TrenchMOS SiliconMAX standard level FET
NXP Semiconductors.
N-channel TrenchMOS SiliconMAX standard level FET
Nexperia B.V. All rights reserved
N-channel TrenchMOS SiliconMAX standard level FET
NXP Semiconductors.
N-channel TrenchMOS SiliconMAX standard level FET
Nexperia B.V. All rights reserved
N-channel TrenchMOS SiliconMAX standard level FET
Nexperia B.V. All rights reserved
N-channel TrenchMOS SiliconMAX standard level FET
NXP Semiconductors.

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