Description
The 20082 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 15 watts output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard.

• 10 Watts Linear Power
• Output Power at 1 dB Compressed = 15 W
• Class AB Characteristics
• 30% Collector Efficiency at 7.5 Watts
• Gold Metallization
• Silicon Nitride Passivated