Description
The 20091 is an NPN, common emitter RF power transistor intended for 25 Vdc class A operation from 470 to 860 MHz. It is rated at 30 watts P-sync output power. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability.
100% lot traceability is standard.

• 30 Watts (P-Sync), 470–860 MHz
• Class A Characteristics
• Silicon Nitride Passivated
• Gold Metallization
• Excellent Linearity