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PTFC270051M-V2-R1K 数据手册 ( 数据表 ) - Cree, Inc

PTFC270051M image

零件编号
PTFC270051M-V2-R1K

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page
14 Pages

File Size
560.2 kB

生产厂家
Cree
Cree, Inc Cree

Description
The PTFC270051M is an unmatched 5-watt LDMOS FET suitable for power amplifier applications with frequencies from 900 MHz to 2700 MHz. This LDMOS transistor offers excellent gain, efficiency and linearity performance in a small overmolded plastic package.


FEATUREs
• Unmatched
• Typical CW performance, 940 MHz, 28 V
   - Output power (P1dB) = 6.5 W
   - Gain = 23 dB
   - Efficiency = 62%
• Typical CW performance, 2170 MHz, 28 V
   - Output power (P1dB) = 7.3 W
   - Gain = 20.3 dB
   - Efficiency = 60%
• Typical CW performance, 2655 MHz, 28 V
   - Output power (P1dB) = 7.3 W
   - Gain = 19.9 dB
   - Efficiency = 59.5%
• Capable of handling 10:1 VSWR @ 28 V, 5 W (CW)
   output power
• Integrated ESD protection: Human Body Model
   Class 1A (per JESD22-A114)
• Pb-free and RoHS compliant


零件编号
产品描述 (功能)
PDF
生产厂家
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High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 – 2700 MHz ( Rev : 2015 )
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High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 – 2400 MHz
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High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 – 2400 MHz
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High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 – 2200 MHz
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High Power RF LDMOS Field Effect Transistor 4 W, 28 V, 700 – 2200 MHz
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