Description
QL76F6S series are MOCVD grown band Gain-Guided type InGaAlP Laser Diode with quantum well structure. They are emitting at typical 670 nm with rated output power of 10 mW CW at room temperature. The 5.6 mm TO package includes a cap and flat window, and contains a built in monitor PD.

• Red Laser Diode
• 670 nm, 10 mW CW
• Single Mode
• 5.6 mm TO package, flat window
• Built-in Monitor PD