Features
1) The QS5U26 conbines Pch Treueh MOSFET with a
    Schottky barrier diode in a single TSMT5 package.
2) Pch Treueh MOSFET have a low on-state resisternce
    with a fast switching.
3) Pch Treueh MOSFET is neucted a low voltage drive
    (2.5V).
4) The independently connected Schottky barrier diode
    have a low forward voltage.

APPLICATIONs
   load switch, DC/DC conversion

Structure
• Silicon P-channel MOS FET
• Schottky Barrier DIODE