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R1LV0108E 数据手册 ( 数据表 ) - Renesas Electronics

R1LV0108E image

零件编号
R1LV0108E

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17 Pages

File Size
110.3 kB

生产厂家
Renesas
Renesas Electronics Renesas

Description
The R1LV0108E Series is a family of low voltage 1-Mbit static RAMs organized as 131,072-word by 8-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies. The R1LV0108E Series has realized higher density, higher performance and low power consumption. The R1LV0108E Series is suitable for memory applications where a simple interfacing, battery operating and battery backup are the important design objectives. It has been packaged in 32-pin SOP,32-pin TSOP and 32-pin sTSOP.


FEATUREs
• Single 2.7~3.6V power supply
• Small stand-by current: 1µA (3.0V, typical)
• No clocks, No refresh
• All inputs and outputs are TTL compatible.
• Easy memory expansion by CS1# and CS2
• Common Data I/O
• Three-state outputs: OR-tie Capability
• OE# prevents data contention on the I/O bus

 

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零件编号
产品描述 (功能)
PDF
生产厂家
4Mb Advanced LPSRAM (512k word × 8bit)
Renesas Electronics
128K x 8bit CMOS SRAM
Hynix Semiconductor
128K x 8bit CMOS SRAM
Hyundai Micro Electronics
128K x 8 1Mb Asynchronous SRAM
Unspecified
128K x 8 1Mb Asynchronous SRAM
Giga Semiconductor
128K x 8 1Mb Asynchronous SRAM
Giga Semiconductor
128K x 8 1Mb Asynchronous SRAM
Giga Semiconductor
128K x 8 1Mb Asynchronous SRAM
Unspecified
128K x 8 1Mb Asynchronous SRAM ( Rev : 2002 )
Giga Semiconductor
128K X 8BIT HIGH SPEED CMOS SRAM
Unspecified

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