RD01MUS2 数据手册 ( 数据表 ) - Quanzhou Jinmei Electronic
零件编号
RD01MUS2
Other PDF
no available.
PDF
page
6 Pages
File Size
224.2 kB
生产厂家
Quanzhou Jinmei Electronic
DESCRIPTION
RD01MUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. This device have an interal monolithic zener diode from gate to source for ESD protection.
FEATURES
• High power gain:
Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz
• High Efficiency: 65%typ.
• Integrated gate protection diode
APPLICATION
For output stage of high power amplifiers in VHF/UHF Band mobile radio sets.
零件编号
产品描述 (功能)
PDF
生产厂家
RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W ( Rev : 2006 )
MITSUBISHI ELECTRIC
RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W ( Rev : 2006 )
MITSUBISHI ELECTRIC
RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W ( Rev : 2010 )
MITSUBISHI ELECTRIC
RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W ( Rev : 2010 )
MITSUBISHI ELECTRIC
RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W ( Rev : 2006 )
MITSUBISHI ELECTRIC
Share Link: