DESCRIPTION
RD12MVS1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.

FEATURES
   High Power Gain:
      Pout>11.5W, Gp>12dB@Vdd=7.2V,f=175MHz
   High Efficiency: 57%typ. (175MHz)

APPLICATION
   For output stage of high power amplifiers in
   VHF band mobile radio sets.