18A, 200V, 0.180 Ohm, N-Channel Power Mosfets

These are N-Channel enhansement mode silicon gate power field effect transistors. They are advance power MOSFETs designed, tested, and guaranteed to withstancd a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
Formerly developmental type TA17422.

FEATUREs
● 18A, 200V
● rDS(ON)=0.180 Ω
● Single Pulse Avalanche Energy Rated
● SOA is Power Dissipation Limited
● Nanosecond Switching Speed
● Linear Transfer Characteristics
● High Input Impedance
● Related Literature
   -TB334 “Guidelines for Soldering Surface Mount Components
      PC Boards”