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RF2137PCBA 数据手册 ( 数据表 ) - RF Micro Devices

RF2137 image

零件编号
RF2137PCBA

产品描述 (功能)

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4 Pages

File Size
53 kB

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RFMD
RF Micro Devices RFMD

Product Description
The RF2137 is a high power, high efficiency linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dual-mode 4-cell CDMA/AMPS hand-held digital cellular equipment, spread spectrum systems, and other applications in the 800MHz to 950MHz band. The device is self-contained with 50Ω input and the output can be easily matched to obtain optimum power, efficiency, and linearity characteristics at all recommended supply voltages.


FEATUREs
• Single 4.2V to 6.0V Supply
• Up to 29 dBm Linear Output Power
• 27dB Gain With Analog Gain Control
• 45% Linear Efficiency
• On-board Power Down Mode
• 800MHz to 950MHz Operation

Typical Applications
• 4.8V AMPS Cellular Handsets
• 4.8V CDMA/AMPS Handsets
• 4.8V JCDMA/TACS Handsets
• Driver Amplifier in Cellular Base Stations
• Portable Battery-Powered Equipment

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零件编号
产品描述 (功能)
PDF
生产厂家
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MEDIUM POWER LINEAR AMPLIFIER
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LOW POWER LINEAR AMPLIFIER ( Rev : V2 )
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MEDIUM POWER LINEAR AMPLIFIER
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HIGH POWER LINEAR AMPLIFIER
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HIGH POWER LINEAR AMPLIFIER
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PCS LINEAR POWER AMPLIFIER
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MEDIUM POWER LINEAR AMPLIFIER
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