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RF2307 数据手册 ( 数据表 ) - RF Micro Devices

RF2307 image

零件编号
RF2307

产品描述 (功能)

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page
4 Pages

File Size
57.6 kB

生产厂家
RFMD
RF Micro Devices RFMD

Product Description
The RF2307 is a general purpose, low cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplification in wireless voice and data communication products operating in frequency bands up to 3000MHz. The device is self-contained with 50Ω input and output impedances and requires only two external DC biasing elements to operate as specified.


FEATUREs
• DC to 3000MHz Operation
• Internally matched Input and Output
• 15dB Small Signal Gain
• 4dB Noise Figure
• 25mW Linear Output Power
• Single Positive Power Supply

Typical Applications
• Broadband, Low Noise Gain Blocks
• IF or RF Buffer Amplifiers
• Driver Stage for Power Amplifiers
• Final PA for Low Power Applications
• Portable Battery Powered Equipment
• Broadband Test Equipment

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零件编号
产品描述 (功能)
PDF
生产厂家
General Purpose Amplifier
ON Semiconductor
GENERAL PURPOSE AMPLIFIER
RF Micro Devices
GENERAL PURPOSE AMPLIFIER
RF Micro Devices
General Purpose Amplifier ( Rev : 2016 )
ON Semiconductor
General Purpose Amplifier
ON Semiconductor
General Purpose Amplifier ( Rev : 2001 )
ON Semiconductor
GENERAL PURPOSE AMPLIFIER
RF Micro Devices
GENERAL PURPOSE AMPLIFIER
RF Micro Devices
GENERAL PURPOSE AMPLIFIER
RF Micro Devices
GENERAL PURPOSE AMPLIFIER
RF Micro Devices

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